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Learn about 13003 transistor, a silicon BJT device with high voltage and switching capabilities. Find out its features, replacement, applications, datasheet and how to use it in circuits.
MJE13003 is a high-voltage, high-speed power switching device for inductive circuits. It has a collector-emitter voltage of 700 V, a current gain of 50, and a thermal resistance of 3.12 C/W.
MJE13003 is a high-voltage, high-speed power switching NPN transistor for inductive circuits. Download the PDF datasheet from ON Semiconductor, a leading manufacturer of semiconductor products.
ST13003 and ST13003-K are fast-switching NPN power transistors with high voltage capability and low spread of dynamic parameters. They are suitable for electronic ballast for fluorescent lighting and SMPS for battery charger applications.
ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Learn about the 13003 transistor, a NPN epitaxial silicon transistor with 700V and 250mA ratings. See the image, PDF file and applications of this transistor type.
13003由LGE (鲁光)设计生产，立创商城现货销售，正品保证，参考价格￥0.1953，封装为TO-92。 商城还提供13003专业规格书、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。
Learn about the 13003/MJE13003 transistor, a power transistor with high voltage and current handling capability. Find out its pinout, specifications, applications, and equivalent parts such as 2N3055, TIP3055, MJ15003, and 2SD882.
The 13003 is a type of high voltage, fast-switching NPN power transistor. It is commonly used in various power switching applications, particularly in electronic ballasts, converters, and power supplies. Its characteristics include a high breakdown voltage and capability to handle significant currents, making it suitable for high-performance switch mode applications. Key Characteristics: Type ...