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IEGT
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IEGT (PPI) is a high-power device that can control large current with voltage drive. It is a pressure-welded device with built-in IEGT chips that improves energy saving, miniaturization, and efficiency of equipment.
This paper compares the characteristics and performance of IGBT, IEGT, and IGCT for hybrid DC circuit breakers (HCBs). It analyzes the working conditions and features of devices, and conducts experiments to compare their turn-off capability.
Press pack IEGT is a pressure contact type high power device with built-in IEGT (Injection Enhanced Gate Transistor (electron-injection-enhanced insulated gate transistor). Figure 1.1 is the structural drawing of the press pack IEGT. All electrical connections use press pack. Since wire bonding connections are not used, high reliability against thermal fatigue can be expected. Using several ...
In the conventional IEGT, the near-surface area has lower carrier concentration and thus exhibits higher resistance than the deeper area. In order to increase the carrier concentration near the surface and thereby further improve the IE effect, we utilized a trench structure for the new IEGT.
Learn how Toshiba's IEGT modules with integrated SiC diodes can reduce losses and improve reliability in high-power motor drives and inverters. Compare the performance and characteristics of IEGT, IGBT, thyristor and SiC devices.
The IEGT device was developed to lower the on-state voltage drop (Kitagawa et al., 1993). Of the development, the device rated at 2500 V has a voltage drop of around 4 V at room temperature. The device structure is shown in Fig. 5.38. It has a deep trench with oxide sidewall to inject the electron carriers via the accumulation layer formed by the electric field along the extended vertical gate ...
Toshiba Electronic Devices & Storage Corporation has launched a newly developed press pack IEGT "ST1000GXH35" with ratings of 4500 V/1000 A for use in high-voltage converters such as DC power transmission systems and industrial motor controllers. The new product ST1000GXH35 employs trench-type IEGT chips and high-speed diode chips.
Learn about reverse conductive IGBT (RC-IGBT) and injection-enhanced gate transistor (IEGT), two types of transistors with low VCE (sat) characteristics at high withstand voltage. See their structures, carrier densities and applications in Fig. 3-16.
This paper proposes a new MOS-gate transistor structure (IEGT) for the first time, that realizes enhanced electron injection so that the carrier distribution takes a form similar to that of a thyristor and a low forward voltage drop is attained even for 4500 V devices. A developed simple analytical one dimensional model can predict a sufficiently accurate current voltage curve and clarifies a ...
Additionally, Toshiba's European branch introduced a 1.7 kV/1.2 kA Injection-Enhanced Gate Transistor (IEGT), which includes SiC and a fast recovery diode for the propulsion converter [143]. Mitsubishi integrated and implemented a 3.3 kV full SiC module for a 1.5 kV DC traction inverter application that consisted of four 190 kW traction motors.