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IEGT
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IEGT (PPI) is a high-power device that can control large current with voltage drive. It is a pressure-welded device with built-in IEGT chips that improves energy saving, miniaturization, and efficiency of equipment.
Learn about reverse conductive IGBT (RC-IGBT) and injection-enhanced gate transistor (IEGT), two types of transistors with low VCE (sat) characteristics at high withstand voltage. See their structures, carrier densities and applications in Fig. 3-16.
This paper compares the characteristics and performance of IGBT, IEGT, and IGCT for hybrid DC circuit breakers (HCBs). It analyzes the working conditions and features of devices, and conducts experiments to compare their turn-off capability.
Toshiba IGBT and IEGT can be used in a wide range of applications, from home appliances to infrastructure equipment. Lineup. IGBTs Toshiba discrete IGBTs contribute energy savings in applications, such as IH cooking equipment, rice cookers, kitchen microwaves, refrigerators, washing machines, air-conditioners. ...
This paper proposes a new MOS-gate transistor structure (IEGT) for the first time, that realizes enhanced electron injection so that the carrier distribution takes a form similar to that of a thyristor and a low forward voltage drop is attained even for 4500 V devices. A developed simple analytical one dimensional model can predict a sufficiently accurate current voltage curve and clarifies a ...
IGBT and IEGT Three design parameters mainly a˜ect the electrical characteristics of IGBTs and IEGTs: (1) chip thickness, (2) MOS structure, and (3) amount of hole injection. Electron flow Dri˚ region Hole flow (2)Improvement of MOS structure (1) Optimization of chip thickness (3) Optimization of amount of hole injection Higher IE e˜ect
This paper presents the mechanism and solutions of operation instability in IEGTs (Injection Enhanced Gate transistors) and HV-IGBT's, which are used in power electronics. It was published in the 12th International Symposium on Power Semiconductor Devices & ICs in 2000.
IGBTs and IGCTs are both are four-layer devices, and on first glance and don't look that different. But, when you 'look under the hood' you find that an insulated gate bipolar transistor (IGBT) and an integrated (sometimes called 'insulated') gate commutated thyristor (IGCT) aren't that similar
Learn how Toshiba's IEGT modules with integrated SiC diodes can reduce losses and improve reliability in high-power motor drives and inverters. Compare the performance and characteristics of IEGT, IGBT, thyristor and SiC devices.
The half cell structure of the DC-IEGT is shown in Fig. 1(a).The whole region between two adjacent trenches is divided into p1, n-well, and p2 regions with the p1 region contacted to the cathode, unlike in the conventional IEGT as shown in Fig. 1(c).In the DC-IEGT structure, with the cathode split into two parts A and B, it is possible to observe the individual contributions of these two parts ...