为您找到"
S8050
"相关结果约100,000,000个
S8050 is a low voltage, high current NPN transistor with a maximum gain of 400. It is used for audio amplification in push-pull configuration with S8550 PNP transistor. See pinout, specifications, applications and datasheet.
SS8050 is a TO-92 packaged transistor with 1.5 A collector current and 40 V collector-base breakdown voltage. It is designed for output amplifier of portable radios in class B push-pull operation and has a complementary SS8550.
S8050 Datasheet (HTML) - Fairchild Semiconductor: S8050 Product details: Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A. Similar Part No. - S8050: Manufacturer: Part # Datasheet: Description: Wing Shing Computer Com...
Find 79 datasheets of S8050, a general-purpose NPN transistor used in low-power applications. Compare manufacturers, specifications, and equivalent transistors for S8050.
S8050 is a low voltage high current small signal NPN transistor for Class B push-pull audio amplifier and general purpose applications. See features, specifications, thermal data and electrical characteristics curves of S8050 in this PDF document.
Learn about the features, specifications, applications and pinout of S8050 NPN transistor, a low voltage high current small signal device. S8050 is suitable for Class B push-pull audio amplifier and general-purpose applications.
S8050 S8050 NPN TRANSISTOR SOT-23 1 2 3 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) CLASSIFICATION OF hFE1 FEATURES • Complimentary to S8550 • Collector Current: IC=0.5A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) 1.BASE 2.EMITTER 3.COLLECTOR Parameter Symbol Value Unit VCBO VCEO VEBO IC PC TJ,Tstg RthJA Collector ...
S8050 COMMON EMITTER T Ta=25 COLLECTOR CURRENT (mA) Static Characteristic 400uA 3SOuA 300uA COMMON EMITTER 1000 200uA 150uA IOOuA COLLECTOR-EMITTER VOLTAGE Open Impulse . 1000 100 COLLECTOR CURRENT (mA) AMBIENT TEMPERATURE COMMON EMITTER 0 0b ib 3 REVERSE VOLTAGE VEB t=1MHZ lc=o Ta=25C
Learn about the S8050 silicon bipolar transistor, its structure, pinout, specifications, electrical characteristics, and equivalents. Find out the companies that produce the S8050 transistor in TO-92 and SOT-23 packages.
S8050 FEATURES z Complimentary to S8550 z Collector Current: I C=0.5A MARKING: J3Y MAXIMUM RATINGS (T A=25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.5 A P C Collector Dissipation 0.3 W T j Junction Temperature 150 ℃