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V1.0 2019 2 AbsoluteMaximumRatings Symbol Parameter Rating Unit CommonRatings(Tc=25℃UnlessOtherwiseNoted) VDSS Drain-SourceVoltage 40 V VGSS Gate-SourceVoltage ±20 V TJ JunctionTemperatureRange -55to175 ℃ TSTG StorageTemperatureRange -55to175 ℃ IS SourceCurrent-Continuous(BodyDiode) Tc=25℃ 190 A MountedonLargeHeatSink IDM PulsedDrainCurrent* Tc=25℃ 720 A ID ContinuousDrainCurrent
10PCS HYG025N04NR1C2 G025N04 Transistor N-MOSFET 40V 170A PDFN5*6-8L NEW. SZOUTER2015-Electronics (3778) 99.4% positive; Seller's other items Seller's other items; Contact seller; US $15.00/ea. or Best Offer. Condition: New New. New. A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). ...
6.1. Size:1497K 1 hyg025n06ls1c2.pdf HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B
HYG025N04NA1D Manufacturer HUAYI MFR.Part # HYG025N04NA1D JLCPCB Part # C2874950 Package TO-252 Description 40V 125A 2.5mΩ@10V,40A 93W 2.7V@2.5mA 1PCSNChannel TO-252 MOSFETs ROHS
10PCS 100%New Original HYG025N04NA1D G025N04 TO-252 N-channel 40V 125A field-effect transistor (MOSFET) 1 sold. Customer Reviews Specifications Description Store More to love . Reviews. Related items. Specifications. Hign-concerned Chemical. None. Model Number. HYG025N04NA1D. Condition. New. Type. IC. Brand Name. JXCWGOO. Origin. Mainland China ...
G025N04 XYMXXXXXX: Package Code C2: PDFN8L(5x6) Date Code XYMXXXXXX: HYG025N04NA1C2典型应用电路及封装图： ...
HYG025N04NA1D of Huayi are available at X-ON Electronics Components. X-ON offers better pricing, availability, various range and buying options of HYG025N04NA1D
HYG025N04NA1D MOSFET N-Channel 40V 125A Transistor electronics G025N04 TO-252, You can get more details about HYG025N04NA1D MOSFET N-Channel 40V 125A Transistor electronics G025N04 TO-252 from mobile site on Alibaba.com
CMSA025N04由Cmos(广东场效应半导体)设计生产，立创商城现货销售。CMSA025N04价格参考￥1.64。Cmos(广东场效应半导体) CMSA025N04参数名称：类型：1个N沟道；漏源电压(Vdss)：40V；连续漏极电流(Id)：100A；导通电阻(RDS(on))：2.5mΩ@10V,50A；耗散功率(Pd)：85W；阈值电压(Vgs(th))：1V；栅极电荷量(Qg)：65nC@20V；输入电容 ...
HYG025N04NR1C2 www.hymexa.com V1.0 2 AbsoluteMaximumRatings Symbol Parameter Rating Unit CommonRatings(Tc=25℃UnlessOtherwiseNoted) VDSS Drain-SourceVoltage 40 V VGSS Gate-SourceVoltage ±25 V TJ JunctionTemperatureRange -55to175 ℃ TSTG StorageTemperatureRange -55to175 ℃ IS SourceCurrent-Continuous(BodyDiode) Tc=25℃ 170 A MountedonLargeHeatSink