为您找到"
hy3810
"相关结果约100,000,000个
HY3810P is a 100V/180A N-channel enhancement mode MOSFET with low RDS(ON) and avalanche tested. It has various pin descriptions, ordering and marking information, and electrical characteristics for switching and power management applications.
HY3810P Transistor Datasheet, HY3810P Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
HY3810P is a 100V/180A N-channel enhancement mode MOSFET with low RDS(ON) and high reliability. Download the PDF datasheet or view the HTML version for more details and applications.
HY3810P由HUAYI(华羿微)设计生产，立创商城现货销售，正品保证，参考价格￥4.42，封装为TO-220FB。商城还提供HY3810P专业规格书、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。参数：数量：1个N沟道；漏源电压(Vdss)：100V；连续漏极电流(Id)：180A；导通电阻(RDS(on))：6 ...
Free download the datasheet for HY3810P from HUAYI.
10 Slice MOS Transistor HY3810 HY3810W TO-247: Amazon.com: Industrial & ScientificTransistor, also known as bipolar transistor or crystal transistor, is a semiconductor device that controls current. Its function is to amplify weak signals into electrical signals with larger amplitudes, and it is also used as a contactless switch. Triode is one of the basic semiconductor components, which has ...
HY3810P/B/MF is a 100V/180A N-channel enhancement mode MOSFET with low RDS(ON) and high avalanche energy. It is suitable for power switching applications and compliant with RoHS and green standards.
Find datasheets of HY3810, a N-channel enhancement mode MOSFET manufactured by HUAYI MICROELECTRONICS CO.,LTD. Compare different versions and specifications of HY3810 and related products.
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improveme nts to this product and/or to this document at any time without notice.
Marking: HY3810. Part #: HY3810B6. Package: TO-263-6L. Datasheet: 1MbKb/9P. Manufacturer: HUAYI MICROELECTRONICS CO.,LTD.. Description: N-Channel Enhancement Mode ...