为您找到"
hyg025n06
"相关结果约100,000,000个
Free download the datasheet for HYG025N06LS1C2 from HUAYI.
HYG025N06LS1D由HUAYI (华羿微)设计生产，立创商城现货销售，正品保证，参考价格￥1.8，封装为TO-252-2。商城还提供HYG025N06LS1D专业规格书、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。参数：数量：1个N沟道；漏源电压 (Vdss)：60V；连续漏极电流 (Id)：160A；导通电阻 ...
HYG025N06LS1P Transistor Datasheet, HYG025N06LS1P Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
MOSFETS > HYG025N06-LS1P [2KVA] Type Designator: HYG025N06LS1P Marking Code: G025N06_GO25N06 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 125 W Maximum Drain-Source Voltage |Vds|: 60 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs (th)|: 3 V Maximum Drain Current |Id|: 160 A Maximum Junction Temperature (Tj): 175 ...
HYG025N06LS1C2 from HUAYI - MOSFETs is available for JLCPCB assembly, check the stock, pricing and datasheet, and let JLCPCB helps you assemble the part HYG025N06LS1C2 for free.
HYG025N06LS1C2 Datasheet. Part #: HYG022N03LQ1D. Datasheet: 1MbKb/11P. Manufacturer: HUAYI MICROELECTRONICS CO.,LTD.. Description: N-Channel Enhancement Mode MOSFET ...
HYG025N06LS2C2 - are manufactured by HUAYI (华羿微). HQonline offers the price, inventory, datasheet of HYG025N06LS2C2. Authentic guaranteed & available to ship same day. Buy now!
HYG025N06LS2C2 by HUAYI - In-stock components at LCSC. Price from $0.3078. Free access HYG025N06LS2C2 datasheet, Package, pinout diagrams, and BOM tools.
Buy 10PCS HYG025N06LS1P G025N06 G025N06P HYG025N06 TO-220 60V 160A MOSFET New original at Aliexpress for . Find more 44, 200004373 and 100000310 products. Enjoy Free Shipping Worldwide! Limited Time Sale Easy Return.