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IR MOSFET™ N-channel Power MOSFET ; SO-8 package; 26 mOhm;
www.irf.com 1 09/21/04 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.6 A IDM Pulsed Drain Current 56 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 3.7 V/ns
IRF7478 Datasheet (HTML) - International Rectifier: IRF7478 Product details: Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current.
˘ ˇ ˆ˙ ˝ ˛˘ ˚ ˜ ˘ ! Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100
www.irf.com 1 3/13/01 IRF7478 SMPS MOSFET HEXFET® Power MOSFET Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.6 A IDM Pulsed Drain Current † 56 PD @TA = 25°C Power Dissipation— 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt ƒ 3.7 V/ns
Order today, ships today. IRF7478PBF - N-Channel 60 V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
IRF7478PBF Infineon Technologies MOSFETs 60V 1 N-CH HEXFET 26mOhms 21nC datasheet, inventory, & pricing.
Download IRF7478 Datasheet. File Size: 209.14 Kbytes. Part #: IRF7478. Description: Power MOSFET(Vdss=60V). Manufacturer: International Rectifier.
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IRF7478TRPBF Infineon Technologies MOSFETs MOSFT 60V 7.6A 26mOhm 21nC datasheet, inventory, & pricing.